受限于传统计算器体系的冯-诺依曼架构，存储器带宽与计算需求之间的存储墙问题日益突出，1T1C DRAM正面临工艺微缩的挑战。HBM的出现是DRAM从2D架构转向3D架构的突破，此外研究者们也开始在无电容技术方面下功夫，有Dynamic Flash Memory、VLT技术、Z-RAM等技术出现。

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...

在AI、数据中心、自动驾驶、云计算等多个应用市场不断发展的情况下，3D DRAM拥有广阔的增长空间。 1966年的秋天，IBM研究中心的Robert H. Dennard发明了动态随机存取存储器（DRAM），几十年后，这份伟大的成就为半导体行业缔造了一个影响巨大且市场规模超千亿 ...

Since the invention of the 1T1C bit cell more than 50 years ago, DRAMs have become the main memory of choice for processors in computer systems and many consumer electronics devices. As new use ...